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Advanced Information
SPF-5122Z
Product Description
The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 400-3000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF-5122Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. High maximum input power specification make it ideal for high dynamic range receivers.
400-3000 MHz, GaAs pHEMT Low Noise MMIC Amplifier
Pb
RoHS Compliant & Green Package
Gain and NF vs. Frequency Broadband Application Circuit
30 27 24 21 2.0 1.8 1.6 1.4
15 12 9 6 3 0 0 500 1000 1500 2000 2500
1.0 0.8 0.6 0.4 0.2 0.0 3000
NF (dB)
18
1.2
Product Features * Ultra-Low Noise Figure = 0.6dB @ 900MHz * Gain = 19dB @ 900MHz * High Linearity: OIP3 = 40.5dBm @ 1900MHz * P1dB = 24dBm @ 1900MHz * Single Supply Operation: 5V @ Idq=90mA * Broadband Internal Matching * Small Package: QFN 2x2 * RoHS/WEEE Compliant Package Applications * Cellular, PCS, DCS1800, CDMA, WCDMA Receivers * Low noise, high linearity gain block applications
Units Frequency Min. Typ. Max.
Gain (dB)
Frequency (MHz)
Symbol
Parameters
S21 NF OIP3 P1dB S11 S22 S12 VD ID Rth, j-l
Small Signal Power Gain Noise Figure Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Device Operating Voltage Device Operating Current Thermal Resistance (junction-to-Lead)
dB dB dBm dBm dB dB dB V mA C/W
0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz
18.8 13.0 0.65 0.70 38.5 40.5 23.0 23.8 -14.0 -19.0 -16.5 -12.5 -24.0 -18.5 5.0 90 65
Test Conditions: VS = 5.0V, IDQ = 90mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms, 25C, Broadband Application Circuit
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2006 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-105470 Rev B
Advanced Information SPF-5122Z GaAs pHEMT Low Noise MMIC Amplifier
Typical RF Performance (With Broadband Application Circuit)
Symbol S21 NF OIP3 P1dB S11 S22 S12 Parameter Small Signal gain Noise Figure Output Third Order Intercept Point Output Power at 1dB compression Input Return Loss Output Return Loss Reverse Isolation
VS=5.0V IDQ=90mA
Unit dB dBm dBm dB dB dB dB
0.4 23.5 0.45 35.0 23.0 -10.0 -19.0 29.0
0.8 19.5 0.60 37.5 23.0 -13.5 -17.0 -25.0
0.9 18.8 0.65 38.5 23.0 -14.0 -16.5 -24.0
TL = 25C
Frequency (GHz) 1.0 1.9 18.0 13.0 0.70 0.70 38.5 40.5 23.3 23.5 -15.0 -19.0 -16.0 -12.5 -23.5 -18.5
Zs = ZL = 50Ohms
2.2 11.6 0.80 40.5 24.0 -21.5 -12.5 -17.5
2.5 10.6 0.90 42.0 24.0 -23.5 -11.5 -16.5
3 9.1 1.00 42.0 24.0 -22.5 -11.0 -15.0
Test Conditions:
OIP3 Tone Spacing = 1MHz
Pout per tone = 0 dBm
Reliability & Quanification Information Parameter Absolute Limit ESD Rating - Human Body Model (HBM) Class 1B Moisture Sensitivity (MSL) MSL 1 This product qualification report can be downloaded at: www.sirenza.com
Absolute Maximum Ratings Parameter Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power Max Dissipated Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temp. Absolute Limit 120mA 5.5V 27dBm 660mW 150C -40 to +85C -65 to +150C
Typical RF Performance (With Broadband Application Circuit)
DCIV Over Temperature
120 100 80
60 40 20 0 0 1 2 3 4 5 6
25C -40C 85C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=Source Lead Temperature
mA
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Vs
OIP3 vs Frequency
46 44 Pout = 0dBm /Tone, 1MHz Spacing 42 40
-40 -45
IM3 vs. Power
Fc = 900MHz, 1MHz Spacing -50 -55
dBm
dBc
25C
38 36 34 32 30 0 500 1000 1500 2000 2500 3000
-40C 85C
-60 -65 -70 -75 -80 0 3 6 9 12 15 25C -40C 85C
Frequency (MHz)
Power Output Per Tone (dBm)
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com
EDS-105470 Rev B
Advanced Information SPF-5122Z GaAs pHEMT Low Noise MMIC Amplifier
Typical RF Performance (Broadband Application Circuit, 5V, 90mA)
|S11| vs. Frequency
0 -5 -10
30 25 20
|S21| vs. Frequency
dB
-15 -20 -25 -30 0 500 1000 1500 2000 2500 3000
dB
15 10 5 0 0 500 1000 1500 2000 2500 3000
-40C 25C 85C
-40C 25C 85C
Frequency (MHz)
Frequency (MHz)
|S12| vs. Frequency
0 -5 -10 -40C 25C 85C
0 -5 -10
|S22| vs. Frequency
dB
-15 -20 -25 -30 0 500 1000 1500 2000 2500 3000
dB
-15 -20 -25 -30 0 500 1000 1500 2000 2500 3000 -40C 25C 85C
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 500 1000 1500 2000 2500 3000 dB 25C 85C
27 26 25 24 23
P1dB vs. Frequency
dBm
22 21 20 19 18 17 0 500 1000 1500 2000 2500 3000 25C -40C 85C
Frequency (MHz)
Frequency (MHz)
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-105470 Rev B
Advanced Information SPF-5122Z GaAs pHEMT Low Noise MMIC Amplifier
Typical RF Performance De-embedded S-parameters (5V, 90mA)
30 25 20
Max Gain vs. Frequency
Gmax S21
Gain (dB)
15 10 Gmax 5 S21 0 -5 0 2 4 6 8 10 12
Frequency (GHz)
S11 vs. Frequency
S22 vs. Frequency
12 GHz 6 GHz 4 GHz 3 GHz 2 GHz 1 GHz .5 GHz .05 GHz 6 GHz 4 GHz 12 GHz 8 GHz 10 GHz 8 GHz .05 GHz 1 GHz 2 GHz 3 GHz 10 GHz .5 GHz
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com
EDS-105470 Rev B
Advanced Information SPF-5122Z GaAs pHEMT Low Noise MMIC Amplifier
Broadband Application Circuit (400 - 3000MHz)
Vs 0.1uF 100pF
150nH 2 RF in 100pF Epad
SPF-5122Z
7 RF out 100pF
Evaluation Board Layout
Bill of Materials C1 C2 C3 C4 L1 1x TAJB104KLRH Rohm 0.1uF 1x MCH185A101JK Rohm 100pF 1x MCH185A101JK Rohm 100pF 1x MCH185A101JK Rohm 100pF 1x LL1608-FSR15J Toko 150nH
C1 C2
L1
C3
C4
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com
EDS-105470 Rev B
Advanced Information SPF-5122Z GaAs pHEMT Low Noise MMIC Amplifier
Pad #
Function
Description
1, 4, 5, 8 2, 3 6, 7 EPAD
N/A RFIN
Ground or No Connect. Ground recommended.
RF input pins. These pis are DC coupled and matched to 50 Ohms. An external DC block is required. RF output and Bias pins. These pins are DC coupled and matched to 50 Ohms. Bias is applied RFOUT / Bias through these pads. GND Package bottom must be soldered or epoxied to RF/DC ground.
Part Number Ordering Information
Part Number Reel Size Devices/Reel
Suggested Pad Layout
SPF-5122Z
7"
3000
Part Identification
Pin 1 Designation (top view)
0.0295 0.0088
0.0057
1
8
2
3
SPF 51Z
7
0.0337
6
O0.0120
5
4
O0.0200
Nominal Package Dimensions
Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 6
http://www.sirenza.com
EDS-105470 Rev B

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